Controlling Single Microwave Photons:A New Frontier in Microwave Engineering

In microwave engineering we are accustomed to thinking of the electromagnetic energy in our circuits as transmitted by waves. Now, new technologies are being developed that deal with signals at the level of single photons where this is no longer valid. Here we describe some of the challenges and opportunities in this rapidly developing field

On-chip magnetic cooling of a nanoelectronic device

We demonstrate significant cooling of electrons in a nanostructure below 10mK by demagnetisation of thin-film copper on a silicon chip. Our approach overcomes the typical bottleneck of weak electron-phonon scattering by coupling the electrons directly to a bath of refrigerated nuclei, rather than cooling via phonons in the host lattice. Consequently, weak electron-phonon scattering becomes an advantage. It allows the electrons to be cooled for an experimentally useful period of time to temperatures colder than the dilution refrigerator platform, the incoming electrical connections, and the host lattice. There are efforts worldwide to reach sub-millikelvin electron temperatures in nanostructures to study coherent electronic phenomena and improve the operation of nanoelectronic devices. On-chip magnetic cooling is a promising approach to meet this challenge. The method can be used to reach low, local electron temperatures in other nanostructures, obviating the need to adapt traditional, large demagnetisation stages. We demonstrate the technique by applying it to a nanoelectronic primary thermometer that measures its internal electron temperature. Using an optimised demagnetisation process, we demonstrate cooling of the on-chip electrons from 9mK to below 5mK for over 1000 seconds

Механический резонанс в кремниевом нанопроводе с высокой добротностью

Resonance properties of nanomechanical resonators based on doubly clamped silicon nanowires, fabricated from silicon-on-insulator and coated with a thin layer of aluminum, were experimentally investigated. Resonance frequencies of the fundamental mode were measured at a temperature of $20\,\mathrm{mK}$ for nanowires of various sizes using the magnetomotive scheme. The measured values of the resonance frequency agree with the estimates obtained from the Euler-Bernoulli theory. The measured internal quality factor of the $5\,\mathrm{\mu m}$-long resonator, $3.62\times10^4$, exceeds the corresponding values of similar resonators investigated at higher temperatures. The structures presented can be used as mass sensors with an expected sensitivity $\sim 6 \times 10^{-20}\,\mathrm{g}\,\mathrm{Hz}^{-1/2}$

Parallel pumping of electrons

We present simultaneous operation of ten single-electron turnstiles leading to one order of magnitude increase in current level up to 100 pA. Our analysis of device uniformity and background charge stability implies that the parallelization can be made without compromising the strict requirements of accuracy and current level set by quantum metrology. In addition, we discuss how offset charge instability limits the integration scale of single-electron turnstiles.Comment: 6 pages, 4 figures, 1 tabl

Photothermal responsivity of van der Waals material-based nanomechanical resonators

Nanomechanical resonators made from van der Waals materials (vdW NMRs) provide a new tool for sensing absorbed laser power. The photothermal response of vdW NMRs, quantified from the resonant frequency shifts induced by optical absorption, is enhanced when incorporated in a Fabry-Perot (FP) interferometer. Along with the enhancement comes the dependence of the photothermal response on NMR displacement, which lacks investigation. Here, we address the knowledge gap by studying electromotively driven niobium diselenide drumheads fabricated on highly reflective substrates. We use a FP-mediated absorptive heating model to explain the measured variations of the photothermal response. The model predicts a higher magnitude and tuning range of photothermal responses on few-layer and monolayer NbSe$_{2}$ drumheads, which outperform other clamped vdW drum-type NMRs at a laser wavelength of $532\,$nm. Further analysis of the model shows that both the magnitude and tuning range of NbSe$_{2}$ drumheads scale with thickness, establishing a displacement-based framework for building bolometers using FP-mediated vdW NMRs.Comment: 7 pages, 4 figure

Fabry-Perot Interferometric Calibration of 2D Nanomechanical Plate Resonators

Displacement calibration of nanomechanical plate resonators presents a challenging task. Large nanomechanical resonator thickness reduces the amplitude of the resonator motion due to its increased spring constant and mass, and its unique reflectance. Here, we show that the plate thickness, resonator gap height, and motional amplitude of circular and elliptical drum resonators, can be determined in-situ by exploiting the fundamental interference phenomenon in Fabry-Perot cavities. The proposed calibration scheme uses optical contrasts to uncover thickness and spacer height profiles, and reuse the results to convert the photodetector signal to the displacement of drumheads that are electromotively driven in their linear regime. Calibrated frequency response and spatial mode maps enable extraction of the modal radius, effective mass, effective driving force, and Young's elastic modulus of the drumhead material. This scheme is applicable to any configuration of Fabry-Perot cavities, including plate and membrane resonators

Single electron tunnelling oscillations in a current-biased Josephson junction

Searching for single electron tunnelling (SET) oscillations has been done in single ultrasmall Josephson junctions of area S≈0.01 μm2 at low temperatures, T≈50 mK. The current-biased regime of the junctions was achieved by insertion of high-Ohmic metallic resistors with R≈500 kΩ into dc leads and additional tunnel junctions of the same area into the voltage leads. Existence of the SET oscillations was proved by observation of the peaks in the dV/dI curves under irradiation of the junctions by an external RF signal when the critical current was suppressed by a magnetic field. The dc current position of the peaks was proportional to the frequency of the RF signal, following a relation I=±ef in correspondence to predictions of the Orthodox theory. Without magnetic field, clear peaks occurred at I=±2ef, following the Bloch relation

Coulomb Blockade in Resistively Coupled Single-Electron Transistor: Dependence on Bias Conditions

We have measured resistively coupled single electron transistors under two bias conditions: asymmetric and symmetric. We observed a characteristic Coulomb blockade pattern whose shape is significantly different for the two cases. Our simulations based on the orthodox theory of single-electron tunneling are in good qualitative agreement with the experimental data

Observation of thermally excited charge transport modes in a superconducting single-electron transistor

Experiments on a superconducting single-electron transistor are reported. A new structure in the current-voltage characteristics at subgap voltages was observed when temperature was not too low as compared to the superconducting transition temperature Tc of the sample. The strength of the anomalies increases exponentially with temperature. The dominating features arise from matching of singularities in the density of states on two sides of a tunnel junction, and from the Josephson-quasiparticle cycle. Thermal excitations are essential for the former process, and they also make the latter process possible at low voltages

Zero-average Bias Bidirectional Single-electron Current Generation in a Hybrid Turnstile

Hybrid turnstiles have proven to generate accurate single-electron currents. The usual operation consists of applying a periodic modulation to a capacitively coupled gate electrode and requires a nonzero DC source-drain bias voltage. Under this operation, a current of the same magnitude and opposite direction can be generated by flipping the polarity of the bias. Here, we demonstrate that accurate single-electron currents can be generated under zero average bias voltage. We achieve this by applying an extra periodic modulation with twice the frequency of the gate signal and zero DC level to the source electrode. This creates a time interval, which is otherwise zero, between the crossings of tunnelling thresholds that enable single-electron tunnelling. Furthermore, we show that within this operation the current direction can be reversed by only shifting the phase of the source signal.Peer reviewe